Sapphire Crystal Growth by the Heat Exchanger Method

In the field of sapphire crystal growth, the Heat Exchanger Method (HEM) is commonly used to control temperature gradients and heat flow, especially during the growth of high-quality single crystals. It utilizes a heat exchanger to precisely regulate and maintain the temperature environment required for crystal growth, ensuring that the crystal grows in a stable and uniform thermal field, thereby minimizing defects.

This method is typically applied in crystal growth techniques such as Czochralski method (CZ) or Bridgman method, where temperature control is critical for crystal quality.